Microwave small-signal modelling of FinFETs using multi-parameter rational fitting method
نویسندگان
چکیده
An effective approach based on a multi-parameter rational fitting technique is proposed to model the microwave small-signal response of active solid-state devices. The model is identified by fitting multibias scattering-parameter measurements and its analytical expression is implemented in a commercial microwave circuit simulator. The approach has been applied to the modelling of a silicon-based FinFET, and an excellent agreement is obtained between the measured data and model predictions.
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